fast recovery diode rf101l4s ? applications ? dimensions (unit : mm) general rectification ? features 1)small power mold type. (pmds) 2)ultra low v f 3)ultra high switching speed 4)low switching loss ? construction silicon epitaxial planar ? structure ? taping dimensions (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io a i fsm a tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions forward voltage v f - - 1.25 v i f =1.0a i r --10 av r =400v reverse recovery time trr - - 25 ns i f =0.5a,i r =1a,irr=0.25*i r reverse current ? land size figure (unit : mm) storage temperature ? 55 to ? 150 (*1)mounted on epoxy board. 180half sine wave parameter forward current surge peak (60hz ?1cyc) 25 junction temperature 150 reverse voltage (dc) 400 average rectified forward current (*1) 1 parameter limits reverse voltage (repetitive) 400 pmds 2.0 4.2 2.0 4.00.1 2.90.1 4.00.1 2.00.05 1.550.05 5.50.05 1.750.1 120.2 1.55 9.50.1 0.3 5.30.1 0.05 2.8max rohm : pmds jedec : sod-106 manufacture date 6 6 0.10.02 0.1 2.60.2 2.00.2 5.00.3 1.20.3 4.50.2 1.50.2 88 1/3 2011.06 - rev.b www.rohm.com ?2011 rohm co., ltd. all rights reserved.
rf101l4s ? electrical characteristics curves 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1m im=10ma if=100ma 300u time mounted on epoxy board 0 5 10 15 20 25 30 ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs ave:18.4ns 0 50 100 150 200 250 300 350 400 450 500 1 10 100 0 5 10 15 20 25 30 forward voltagevf(mv) vf-if characteristics forward current:if(a) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) trr dispersion map reverse recovery time:trr(ns) f=1mhz ta=25 vr=400v n=30pcs ave:24.8na forward power dissipation:pf(w) 0.001 0.01 0.1 1 0 200 400 600 800 1000 1200 ta=25 ta=-25 ta=75 ta=150 ta=125 0.1 1 10 100 1000 10000 0 50 100 150 200 250 300 350 400 ta=125 ta=75 ta=25 ta=-25 ta=150 800 900 1000 1100 1200 1300 ave:1007mv ta=25 if=1a n=30pcs 0 10 20 30 40 50 60 70 80 90 100 ta=25 f=1mhz vr=0v n=10pcs ave:41.8pf 0 50 100 150 200 ave:48.0a 8.3ms ifsm 1cyc 1 10 100 1000 110100 8.3ms ifsm 1cyc 8.3ms 10 100 1000 1 10 100 t ifsm 0 0.5 1 1.5 2 2.5 3 00.511.52 sin(?180) d=1/2 dc 2/3 2011.06 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf101l4s ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) electrostatic discharge test esd(kv) esd dispersion map 0 1 2 0 25 50 75 100 125 150 t tj=150 d=t/t t vr io vr=200v 0a 0v d=1/2 sin(? 180) dc 0 1 2 3 0 25 50 75 100 125 150 t tj=150 d=t/t t vr io vr=200v 0a 0v 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k ave4 .60kv ave16.3kv 3/3 2011.06 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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